Peng GAO (高鹏), Ph.D., PI

Assistant Professor

Electron Microscopy Laboratory&Center for Nanochemistry,Peking University, China

E-mail: p-gao@pku.edu.cn

Publications online link

Group: http://www.phy.pku.edu.cn/~pgao/home.html

 v   Professional Experience & Education

2015–now: Assistant Professor, in School of Physics, Peking University, China.

2014–2015:  Japan Society for the Promotion of Science (JSPS) foreign researcher fellow, in The University of Tokyo, Japan.

2013–2014: Research Associate, in Sustainable Energy Technologies, Brookhaven National Laboratory, USA.

2010–2013: Research Fellow, in Department of Materials Science& Engineering, University of Michigan, USA.

2010, Ph.D. of physics, in Institute of Physics, Chinese Academy of Sciences, China.

2005,   B.S. of physics, in University of Science and Technology of China.

v   Research Interests & Background

His primary area of interest is statically and dynamically characterizing functional (nano)-materials and devices through various transmission electron microscopy (TEM) techniques, including quantitative image analysis, ultra-high resolution electron energy loss spectroscopy, and in situ TEM techniques. Current research interest: (1) Atomic and electronic structures of defects; (2) In situ probing phase transformation and structure evolution of defects; (3) Dynamics of ionic transport in solids.

v   Honors & Awards

Recruitment Program for Young Professionals (“the Thousand Talents Plan”), China, 2015; (JSPS) foreign researcher fellow, The University of Tokyo, Japan, 2015; Outstanding graduates (top 5%), Chinese Academy of Sciences, 2010; Director Awards for excellent research, Institute of Physics, Chinese Academy of Sciences, 2009-2010; Proctor & Gamble Prize for excellent research, Chinese Academy of Sciences, 2009.

Selected 11Publications (from Total 36, including 1 Science, 9Nat. Commun./Mater./Nano, 3JACS, 3 Adv.Mater.,950+SCI citation, “*”denotes corresponding author)

1.  P. Gao*, H.-J. Liu, Y.-L. Huang, Y.-H. Chu, R.Ishikawa, B. Feng, Y. Jiang, N. Shibata, E.-G. Wang, Y. Ikuhara, “Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films”.Nature Communications 7, 11318 (2016).
2.  P. Gao*, L.P. Wang, Y.Y. Zhang,Y. Huangand K.H. Liu, “Atomic-Scale Probing of the Dynamics of Sodium Transport and Intercalation Induced Phase Transformations in MoS₂”, ACS nanoDOI: 10.1021/acsnano.5b04950 (2015).
3.   P. Gao, J. Britson, C. T. Nelson, J. R. Jokisaari, C. Duan, M. Trassin, S-H. Baek, H. Guo,L. Li, Y. Wang, Y.-H. Chu, A. M. Minor, C-B. Eom, R. Ramesh, L-Q. Chen, and X.Q. Pan*, “Ferroelastic domain switching dynamics under electrical and mechanical excitations”, Nature Communications5:3801 | DOI: 10.1038/ncomms4801 (2014).
4. Y. Yang, P. Gao, L.Z. Li, X. Q. Pan, S. Tappertzhofen, S. H. Choi, R. Waser, I. Valov, W. D. Lu*, “Electrochemical dynamics of nanoscale metallic inclusions in dielectrics”, Nature Communications 5: 4232 doi:10.1038/ncomms5232(2014).
5. P. Gao, J. Britson, J. R. Jokisaari, C. T. Nelson, S.-H. Baek, Y. Wang, C.-B. Eom,L.-Q. Chen and X.Q. Pan*, “Atomic Scale Mechanisms of Ferroelastic Domain Wall Mediated Ferroelectric Switching”, Nature Communications4:2791 doi: 10.1038/ncomms3791 (2013).
6. S. Lee, C. Tarantini, P. Gao, J. Jiang, J. D. Weiss,       F. Kametani, C. M. Folkman, Y. Zhang, X. Q. Pan,    E. E. Hellstrom, D. C. Larbalestier and C. B. Eom* “Artificially engineered superlattices of pnictide superconductors”, Nature Materials12, 392-396 (2013).
7. P. Gao, C. T. Nelson, J. R. Jokisaari, Y. Zhang, S-H. Baek, C. W. Bark, E-G Wang, Y. M. Liu, J. G. Li, C-B Eom, and X. Q. Pan* “Direct observations of retention failure in ferroelectric memories”. Advanced Materials 24, 1106-1110 (2012).
8.  Y. Yang, P. Gao, S. Gaba, T. Chang, X. Q. Pan, and W. Lu*, “Observation of Conducting Filament Growth in Nanoscale Resistive Memories”. Nature Communications 3,732 (2012).
9. C. T. Nelson, P. Gao, J. R. Jokisaari, K. Zhang, C. Heikes, C. Adamo, A. Melville, B. Winchester, Y. J. Gu, Y. M. Liu, S-H Baek, C. M. Folkman, E-G. Wang, C-B Eom, J. Y. Li, L-Q. Chen, D. G. Schlom, and X. Q. Pan*, “Domain dynamics during ferroelectric switching”. Science 334, 968 (2011).
10.  P. Gao, C. T. Nelson, J. R. Jokisaari, S-H Baek, C. W Bark, Y. Zhang, E-G. Wang, D. G. Schlom, C-B. Eom, and X. Q. Pan*, “Revealing the role of defects in ferroelectric switching with atomic resolution”. Nature Communications 2, 591 (2011).
11. P. Gao, Z. C. Kang, W. Y. Fu, W. L. Wang, X. D. Bai* and E. G. Wang*, “Electrically driven redox process of cerium oxides”. J. Am. Chem. Soc132, 4197-4201 (2010).